GALLIUM NITRIDE BASED LIGHT EMITTING DIODE AND PRODUCING METHOD OF THE SAME

摘要

A gallium nitride-based LED is provided to form a rough surface having a plurality of pits by introducing a polarity conversion layer into a predetermined region of a p-type gallium nitride-based semiconductor layer so that the upper region of the semiconductor layer is converted into an N polarity with lots of defects. A gallium nitride-based semiconductor layer(22) of first conductivity type is formed on a substrate(21). An active layer(25) is formed on the gallium nitride-based semiconductor layer of first conductivity type. A lower gallium nitride-based semiconductor layer(26a) of second conductivity type is formed on the active layer. A polarity conversion layer(27) is formed on the lower gallium nitride-based semiconductor layer of second conductivity type by an MBE method or an MOCVD method, made of a MgN-based single crystal and having a thickness of 10-100 nanometers. An upper gallium nitride-based semiconductor layer(26b) of the second conductivity type is formed on the polarity conversion layer, having a rough surface caused by a plurality of pits formed by converting the surface of the upper gallium nitride-based semiconductor layer is converted into an N polarity by the polarity conversion layer.