THE GROWING METHOD OF NEW CUAU PHASE OF I III VI2 SINGLE CRYSTAL THIN FILMS

摘要

A growing method of a new CuAu phase of I III VI2 single crystal thin film is provided to utilize a new CuAu phase of AgGaSe2 single crystal thin film as a spin-polarized electron source of an accelerator. A compound including elements of a group I and elements of a group III is used as an evaporation source. The evaporation source is supplied to a substrate. A new CuAu phase of I III VI2 single crystal thin film is grown on the substrate by oversupplying elements of a group VI to the substrate. In the growing method, crystal powders of the I III VI2 compound are used as the evaporation source.