发明名称 SEMICONDUCTOR CIRCUIT FOR REDUCING FLICKER NOISE
摘要 A semiconductor circuit capable of reducing flicker noise is provided to reduce phase noise of a VCO(Voltage Controlled Oscillator) and a PLL(Phase Locked Loop) by reducing flicker noise of the VCO and the PLL. In a semiconductor circuit, a pair of cross-coupled field effect transistors comprises bodies and is cross-connected to generate negative-conductance. A body bias voltage supply circuit(130) supplies a body bias voltage to each body of the cross-coupled transistor pair, so that a forward bias voltage is supplied to each body and source of the cross-coupled transistor pair. In the body bias voltage supply circuit, a current generation circuit(131) supplies a current to each body of the cross-coupled field effect transistor pair in response to an enable signal, and a voltage generation circuit(137) generates the body bias voltage on the basis of the current.
申请公布号 KR20070023835(A) 申请公布日期 2007.03.02
申请号 KR20050078084 申请日期 2005.08.25
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YU, JIN HYUCK
分类号 G11C5/14 主分类号 G11C5/14
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