发明名称 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
摘要 <p>A substrate processing apparatus is provided to sufficiently planarize the upper surface of a deposition layer by intermittently pressing the upper surface of the deposition layer by a pressure member. A retaining support member(121) retains and supports a substrate(W) in a process receptacle(120). A heating member(122) heats the substrate supported by the retaining support member. A pressure member whose lower surface is flat presses the upper surface of a substrate deposition layer downward. A control part(150) controls the operation of the heating member and the pressure member in a manner that the upper surface of the substrate deposition layer heated by the heating member is intermittently pressed by the pressure member. An exhaust part(143) exhausts the atmosphere of the process receptacle. A decompression apparatus decompress the process receptacle.</p>
申请公布号 KR20070024411(A) 申请公布日期 2007.03.02
申请号 KR20060080830 申请日期 2006.08.25
申请人 TOKYO ELECTRON LIMITED 发明人 SHINYA HIROSHI;TERADA SHOUICHI;MIZUNO TSUYOSHI;WAKAMOTO YUKIHIRO
分类号 H01L21/00;H01L21/027 主分类号 H01L21/00
代理机构 代理人
主权项
地址