摘要 |
PROBLEM TO BE SOLVED: To provide a method for precisely measuring the depth distribution of dopants injected in a flat substrate at a depth of several ten nm, in a nondestructive manner. SOLUTION: X rays are incident on the substrate in which dopants are injected to a depth of several tens of nanometers, while incident angle is scanned, the interference vibration curve of the X rays reflected by a sample to be measured is measured and the depth distribution of the dopant injected in the sample to be measured is measured from the data of the interference vibration curve. The analysis of the data of the interference vibration curve is performed, by fitting the interference vibration curve to an analytic formula representing X-ray reflectivity. At this time, the dopant distribution is approximated to an appropriate function, and by optimizing the parameter contained in the function, the depth distribution is obtained. COPYRIGHT: (C)2007,JPO&INPIT
|