| 摘要 |
A semiconductor device having at least two controllable states that can be connected to function as a binary memory device (e.g. a DRAM) or alternately as a multi-state (for example four levels) memory device. The device can also be arranged to function substantially as a non-volatile device. The device is formed substantially as a MOSFET that further includes a layer of high-k dielectric between the gate dielectric and the gate electrode to provide one, two, or three charge trap positions. The three charge trap positions allow three different voltage levels plus "0" volts to write the four possible states for two bits ("0-0", "0-1", "1-0", and "1-1"). When in a read mode, a non-destructive current through the transistors varies depending on the voltage level used to write to the transistor and represents the different bit combinations available with 2 bits.
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