发明名称 |
Process for Producing Semiconductor Integrated Circuit Device |
摘要 |
When an oxidation treatment for regenerating a gate insulating film 6 is performed after forming gate electrodes 7 A of a polymetal structure in which a WN<SUB>x </SUB>film and a W film are stacked on a polysilicon film, a wafer 1 is heated and cooled under conditions for reducing a W oxide 27 on the sidewall of each gate electrode 7 A. As a result, the amount of the W oxide 27 to be deposited on the surface of the wafer 1 is reduced.
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申请公布号 |
US2007048917(A1) |
申请公布日期 |
2007.03.01 |
申请号 |
US20060553690 |
申请日期 |
2006.10.27 |
申请人 |
YAMAMOTO NAOKI;UCHIYAMA HIROYUKI;SUZUKI NORIO;NISHITANI EISUKE;KIMURA SHIN ICHIRO;HOZAWA KAZUYUKI |
发明人 |
YAMAMOTO NAOKI;UCHIYAMA HIROYUKI;SUZUKI NORIO;NISHITANI EISUKE;KIMURA SHIN'ICHIRO;HOZAWA KAZUYUKI |
分类号 |
H01L21/8234;H01L21/28;H01L21/31;H01L21/336;H01L21/44;H01L21/768;H01L21/8242;H01L27/108;H01L29/49;H01L29/51 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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