METHOD OF FILM FORMATION, MASK FOR FILM FORMATION AND FILM FORMATION APPARATUS

摘要

A method of film formation comprising partially masking a surface of material (111) and forming a film on film formation area (S1) being an exposed portion of the above surface in accordance with a chemical vapor phase growth method, wherein at the film formation in reaction chamber (310), the material (111) is masked by means of mask (71) provided with heating element (75) and is partially heated by means of the heating element (75) to thereby control the temperature distribution of the film formation area (S1) so that the film formation rate in the film formation area (S1) is uniformized.