发明名称 |
METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICONE THIN FILM AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR USING SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a polycrystalline silicone thin film having enhanced electrical properties, and to provide a method for manufacturing a thin film transistor having the same. SOLUTION: The method includes: a step to form an amorphos silicone thin film on a substrate; a step to partially melt the amorphos silicone thin film by irradiating a part of the amorphos silicone thin film with a laser beam having low energy density; a step to form a polycrystalline silicone grain having a unidirectional crystal arrangement by crystallizing the partially melted amorphos silicone thin film; a step to completely melt the amorphos silicone thin film by being irradiated with a laser beam having high energy density repetitively while moving at predetermined intervals from the polycrystalline silicone grain; and a step to grow the polycrystalline silicone grain by crystallizing the completely melted amorphos silicon thin film so that it may correspond with the unidirectional crystal arragnement. COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2007053364(A) |
申请公布日期 |
2007.03.01 |
申请号 |
JP20060218286 |
申请日期 |
2006.08.10 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
KIM TOHAN;CHUNG SE JIN |
分类号 |
H01L21/20;G02F1/136;H01L21/268;H01L21/336;H01L29/786 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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