| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory element and its manufacturing method. SOLUTION: The nonvolatile memory element comprises a switching element and a storage node connected to it. The storage node comprises a lower electrode, a data preservation layer, and an upper electrode. The data preservation layer comprises a first region where a current route is formed on a first voltage, and a second region enclosing the first region where a current route is formed on a second voltage that is higher than the first voltage. The first region contacts the upper and lower electrodes between them. COPYRIGHT: (C)2007,JPO&INPIT
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