| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the number of manufacturing processes for a semiconductor device by eliminating resist processes before and after an ion implantation process. <P>SOLUTION: In this ion implantation method, ions emitted from an ion source are made to pass through a mask 2 having an opening figure similar to a desired ion implantation region to form a pattern ion beam 4, and the ion beam is projected to the desired region of a wafer 7 with no resist applied, to introduce the ions. <P>COPYRIGHT: (C)2007,JPO&INPIT |
