| 摘要 |
PROBLEM TO BE SOLVED: To secure the write current to be supplied to the memory cell selected for writing without increasing the size of the transistor to drive the current in a semiconductor memory device having a cross-point memory cell array of memory cells consisting of variable resistor elements. SOLUTION: A row selection voltage and a row non-selection voltage are supplied respectively to the selected data row and to the non-selected data row through the data row selection transistor. The column selection voltage and the column non-selection voltage are supplied respectively to the selected bit line and to the non-selected bit line through the bit line selection transistor. It drives the data line DL and the bit line BL separately so as to make the second bias voltage between the row non-selection voltage and the column selection voltage lower than the first bias voltage between the row selection voltage and the column non-selection voltage, when the data line selection transistor has a larger current drive capability than the bit line selection transistor. In an opposite case, however, it drives the data line DL and the bit line BL separately to make the first bias voltage lower than the second bias voltage. COPYRIGHT: (C)2007,JPO&INPIT |
