| 摘要 |
PROBLEM TO BE SOLVED: To provide plasma CVD equipment and method of forming a film uniform in thickness and quality by uniforming a temperature distribution of wafer. SOLUTION: The plasma CVD film forming equipment comprises a reaction chamber, a shower plate arranged in the reaction chamber, and a susceptor arranged in substantially parallel with and by facing to the shower plate for installing the wafer. The shower plate has a surface facing to the susceptor, it is formed by superimposing at least one element on a basic profile profiled in convex at its center, and the susceptor supports the wafer at periphery portion and a location between center and periphery. COPYRIGHT: (C)2007,JPO&INPIT
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