| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon electrode plate for plasma etching having a long service life in which generation of particles is suppressed. SOLUTION: In the silicon electrode plate 2 for plasma etching provided with a through thin hole 5 in parallel with the thickness direction, at least the lower surface 8 of the silicon electrode plate 2 is entirely coated with a silicon chemical deposition film 11 having a mean particle diameter of 1μm or less. COPYRIGHT: (C)2007,JPO&INPIT
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