发明名称 |
Chemical Mechanical Polishing Method and Apparatus |
摘要 |
A method for removing material from the surface of a semiconductor wafer with a chemical mechanical polishing process is described. The method uses a polishing pad on which a line-pattern of grooves is formed. The pattern comprises orderly spaced grooved-area and area without grooves. The method combines information of the surface topography of the wafer, the nature of the material to be removed, and the available groove pattern on the surface of the polishing pad to generate a process recipe in which the resident time of portions of the semiconductor wafer spends at the grooved and un-grooved areas of the polishing pad during the chemical mechanical polishing process is pre-determined.
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申请公布号 |
US2007050077(A1) |
申请公布日期 |
2007.03.01 |
申请号 |
US20060551793 |
申请日期 |
2006.10.23 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
TRAN JOE G.;KANESHIGE CHAD J.;KIRKPATRICK BRIAN K. |
分类号 |
G06F19/00;B24B37/04;H01L21/3105 |
主分类号 |
G06F19/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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