发明名称 METHOD OF FORMING FILM PATTERN, DEVICE, ELECTRO-OPTICAL DEVICE, ELECTRONIC EQUIPMENT, AND METHOD OF MANUFACTURING ACTIVE MATRIX SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a method of forming a film pattern, where a film thickness difference between the film patterns to be formed is eliminated, for example, when arranging a functional liquid in a pattern formation region having some regions whose width is different. SOLUTION: The formation method of the film pattern comprises a process for laminating and forming a first bank layer 35 and a second one 36 on a substrate 18; and a process for forming a bank 34 having a pattern formation region 13, comprising a first pattern formation region 56 and a second pattern formation region 55 that is continuous to the first pattern formation region 56 and is wider than the region 56 by patterning the first and second bank layers 35, 36. The forming material of the first and second bank layers 35, 36 is made of a material having a siloxane bond as a main chain, and the forming material of the second bank layer is a material having a fluorine bond in a side chain. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007053334(A) 申请公布日期 2007.03.01
申请号 JP20060080304 申请日期 2006.03.23
申请人 SEIKO EPSON CORP 发明人 HIRAI TOSHIMITSU;MORIYA KATSUYUKI
分类号 H01L21/3205;G02F1/1343;G02F1/1345;G02F1/1368;H01L21/288;H01L21/336;H01L29/417;H01L29/786;H01L51/50;H05B33/02;H05B33/10 主分类号 H01L21/3205
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