OHMIC ELECTRODE, METHOD OF MANUFACTURING SAME, FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING SAME, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To make lower an ohmic contact resistance between an ohmic electrode and an electron traveling layer from the value than to do when the ohmic electrode is provided at the depth shallower than that of the hetero interface. SOLUTION: The ohmic electrode 62 is provided on the configuration having: the electron traveling layer 20 made of a first semiconductor layer formed on the substrate 16; an electron supply layer 22 including a second semiconductor layer having an electron affinity smaller than that of the first semiconductor layer for hetero junction with the electron traveling layer; and a two-dimensional electron layer 36 induced in the electron traveling layer near the hetero junction 34. The end of the ohmic electrode in the side of the principal surface 16a of the substrate 16 is arranged in the electron traveling layer at the depth deeper than that of the hetero interface through the electron running layer, and a contact resistance between the ohmic electrode and the electron running layer is made lower than it is when the end 66 of the principal surface of the substrate is arranged at the depth shallower than the hetero interface. COPYRIGHT: (C)2007,JPO&INPIT