| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic semiconductor device which can be easily formed without using a special material such as parylene and has a protective film with high passivation effects, and to provide its manufacturing method. SOLUTION: A gate electrode 2 and a gate insulation film 3 are formed on a principal plane of a base substrate 1, a source electrode 4 and a drain electrode 5 are formed on the gate insulation film 3, and an organic semiconductor layer 6 is formed to continuously coat over the electrodes and between the electrodes. Further, a protective film 7 and a protective film 8 coating the organic semiconductor layer 6 are formed by lamination. The protective film 7 is at least a protective film serving to protect the organic semiconductor layer 6 against damage in forming the protective film 8, and is formed by coating or printing. The protective film 8 is at least a protective film serving to prevent oxygen and moisture from entering the semiconductor layer 6. For example, the protective film 7 is formed of PMMA or polyimide, and the protective film 8 made of silicon nitride is formed by a plasma CVD method or a sputtering method. COPYRIGHT: (C)2007,JPO&INPIT
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