| 摘要 |
The invention includes atomic layer deposition (ALD) methods for forming crystalline materials. The crystalline materials can have a first atomic arrangement within one layer, and a second atomic arrangement within another layer; with the first and second atomic arrangements having different crystallographic orientations relative to one another. Alternatively, or additionally, the crystalline materials can have a first portion with a first concentration of a particular element, and a second portion with a second concentration of the particular element which is different than the first concentration.
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