发明名称 Method for manufacturing semiconductor device
摘要 A semiconductor device which is excellent in chemical and physical strength and circumstance resistance is provided. A first stacked film including a first base material and a first adhesive layer is adhered so as to cover one surface of a stacked body including an integrated circuit, the stacked body is sealed by adhering a second stacked film including a second base material and a second adhesive layer so as to cover the other surface of the stacked body, and the first stacked film and the second stacked film are cut. Then, a side surface of the first stacked film and the second stacked film, which is exposed by the cutting, is irradiated with laser light.
申请公布号 US2007045805(A1) 申请公布日期 2007.03.01
申请号 US20060491037 申请日期 2006.07.24
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 WATANABE RYOSUKE;YAMADA DAIKI
分类号 H01L23/02 主分类号 H01L23/02
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