Trench transistor, e.g. for a semiconductor, has a semiconductor body, a trench structure, an electrode structure, a gate electrode structure and a field electrode structure

摘要

Embedded in a trench structure (3) and electrically insulated against a semiconductor body (2) by an insulating structure (5), an electrode structure has a gate electrode structure (4 1) and a field electrode structure (4 2) fitted beneath the gate electrode structure and electrically insulated by it. An independent claim is also included for a method for producing a trench transistor.