| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce an excessive erasure with respect to a method of erasing a nonvolatile memory cell. <P>SOLUTION: This method includes a step of determining groups of rows to erase together in order to minimize the margin loss associated with bake after a large number of program and erasure cycles. The method alternatively includes: a step of determining the groups of rows to erase together to minimize a width of a resultant erase threshold voltage distribution; a step of erasing the groups together; a step of stopping the erasure of the group when a certain group is erased and verified; and a step of performing the step of erasing on those groups which were not previously erased and verified. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
