| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor substrate manufactured with an organic metal chemical vapor deposition method with which carbon is doped in the higher concentration, and non-activation of holes by hydrogen is reduced particularly in the semiconductor layer to which carbon is doped. SOLUTION: In the growing method of compound semiconductor substrate, a carbon-doped semiconductor layer 104 is formed on a GaAs substrate 101 wherein a plane orientation for growing of the semiconductor layer is a little inclined by 1.0°to 2.0°in the direction nearest to the plane (110) from the plane (100) of the GaAs substrate. COPYRIGHT: (C)2007,JPO&INPIT
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