| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a switching element which exhibits two of largely different resistance characteristics non-reciprocally and repetitively and can be applied to a highly integrated non-volatile memory. <P>SOLUTION: The switching element is provided with a variable resistance element in which a metal oxide thin film consisting of a single center metal element including composition fluctuation is interposed between two electrodes. In the switching element, a control circuit capable of selectively applying: a voltage or a current of not less than a first threshold; a voltage or a current not more than a second threshold having an absolute value lower than that of the first threshold; and a voltage or a current not more than a third threshold having an absolute value lower than that of the second threshold, is connected between both the electrodes. In the switching element, a resistance characteristic between the electrodes in a potential region or a current region whose absolute value is at least not more than the third threshold is allowed to non-reciprocally change at 1,000-10,000 times. <P>COPYRIGHT: (C)2007,JPO&INPIT |
