SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which can be operated at a high speed over a wide temperature range, and to provide a method for operating the semiconductor device so that a semiconductor memory device may not be influenced by variation of temperature.

SOLUTION: In this invention, the semiconductor memory device comprises a temperature dependent voltage source for outputting a voltage at its output dependent on a risen temperature measured on the semiconductor memory device. At least one memory cell is provided with at least one first transistor, and the first transistor includes a first transistor main body. The first transistor main body is connected to the output of the temperature dependent voltage source.

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