| 摘要 |
PROBLEM TO BE SOLVED: To reduce the contact resistance during contact connection of a lower layer and an upper layer. SOLUTION: The semiconductor device has a MOS transistor with a normal breakdown voltage (A) formed on a semiconductor substrate and a MOS transistor with a high breakdown voltage (B). The number of plug contact parts 47 to be made into contact connection with a source/drain layer 42 of the MOS transistor with a normal breakdown voltage (A) is smaller than that of plug contact parts 47 to be made into contact connection with a source/drain layer 30 of the MOS transistor with a high breakdown voltage (B). COPYRIGHT: (C)2007,JPO&INPIT
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