发明名称 |
High aspect ratio gap fill application using high density plasma chemical vapor deposition |
摘要 |
A high density plasma chemical vapor deposition process including exciting gas mixture to create a plasma including ions, and directing the plasma into a dense region above the upper surface of the semiconductor wafer, heating the wafer using an additional heat source, and allowing a material from the plasma to deposit onto the semiconductor wafer.
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申请公布号 |
US2007049034(A1) |
申请公布日期 |
2007.03.01 |
申请号 |
US20050218695 |
申请日期 |
2005.09.01 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIOU JOUNG-WEI;LIU TSANG-YU;LIN CHIEN-FENG;CHANG CHENG-LIANG;CHEN MING-TE;LIN CHIA-HUI;TSAI YING-HSIU;WU SZU-AN;LEE YIN-PING |
分类号 |
H01L21/469;C23C16/00 |
主分类号 |
H01L21/469 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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