发明名称 |
Gate-all-around integrated circuit devices |
摘要 |
Gate-all-around integrated circuit devices include first and second source/drain regions on an active area of an integrated circuit substrate. The first and second source/drain regions form p-n rectifying junctions with the active area. A channel region extends between the first and second source/drain regions. An insulated gate electrode surrounds the channel region.
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申请公布号 |
US2007045725(A1) |
申请公布日期 |
2007.03.01 |
申请号 |
US20060374644 |
申请日期 |
2006.03.13 |
申请人 |
YUN EUN-JUNG;LEE SUNG-YOUNG;KIM MIN-SANG;KIM SUNG-MIN |
发明人 |
YUN EUN-JUNG;LEE SUNG-YOUNG;KIM MIN-SANG;KIM SUNG-MIN |
分类号 |
H01L29/94;H01L29/76 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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