SUBSTRATE FOR FILM GROWTH OF GROUP III NITRIDES, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE USING THE SAME

摘要

A substrate for film growth of group III nitride, a method of manufacturing the same, and a semiconductor device using the same are provided which can make an AlN thin film relatively thin without cloudiness, as well as cracks and pits are reduced in a group III nitride thin film layer constituting the device grown thereon. A substrate 10 for film growth of group III nitride is constituted which includes a substrate material 11 and an AlN thin film 12 formed on said substrate as a buffer layer, and a semiconductor device comprising group III nitride thin film is formed thereon, and the AlN thin film is formed at plural steps at least one of which changes film growth conditions during the film growth.