发明名称 |
METHOD OF MANUFACTURING A CHARGE-TRAPPING DIELECTRIC AND METHOD OF MANUFACTURING A SONOS-TYPE NON-VOLATILE SEMICONDUCTOR DEVICE |
摘要 |
In an embodiment, a method of manufacturing a charge-trapping dielectric and a silicon-oxide-nitride-oxide-silicon (SONOS)-type non-volatile semiconductor device includes forming the charge-trapping dielectric, and a first oxide layer including silicon oxide. A silicon nitride layer including silicon-rich nitride is formed by a cyclic chemical vapor deposition (CVD) process using a silicon source material and a nitrogen source gas. A second oxide layer is formed on the silicon nitride layer. Hence, the charge-trapping dielectric having good erase characteristics is formed. In the SONOS-type non-volatile semiconductor device including the charge-trapping dielectric, a data erase process may be stably performed.
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申请公布号 |
US2007048957(A1) |
申请公布日期 |
2007.03.01 |
申请号 |
US20060468944 |
申请日期 |
2006.08.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE SUNG-HAE;LIM JU-WAN;AHN JAE-YOUNG;YANG SANG-RYOL;HWANG KI-HYUN |
分类号 |
H01L21/8228 |
主分类号 |
H01L21/8228 |
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