Trench transistor structure, with a field electrode array in the trenches, has a potential fixed for the field electrodes through semiconductor zones

摘要

The trench transistor structure has a field electrode array (13) in trenches (4). The field electrode array has a conductive link to an array (17) of semiconductor zones (18a-18c) in a semiconductor zone (16) adjacent to a drift zone (8) of the transistor field (1). On applying a gate voltage to the transistor structure, the field electrodes (14a-14c) are fixed on a potential from a semiconductor zone through a space charge zone (20a-20c) extending from the semiconductor zone.