MANUFACTURE METHOD OF NONVOLATILE MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a split-gate nonvolatile memory device. SOLUTION: A first gate insulating film and a first conductive film are formed on a substrate, and an oxide film pattern is formed by oxidizing the conductive film partially. A floating gate electrode is formed on the first gate insulating film through a process of partly etching the first conductive film by using the oxide film pattern as an etching mask. After a first silicon film is formed on all the surface of the substrate where the floating gate electrode is formed, a tunnel insulating film and a second gate insulating film are formed on the side of the floating gate electrode and a part of the surface of the substrate adjacent to the floating gate electrode respectively by oxidizing the first silicon film. A control gate electrode is formed on the tunnel insulating film and the second gate insulating film. A second silicon film is formed on all the surface of the substrate where the control gate electrode is formed, and the second silicon film is turned to a thermal oxide film. COPYRIGHT: (C)2007,JPO&INPIT