SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a MISFET which improves the mobility of carriers without deteriorating a gate insulating film. SOLUTION: In the MISFET, a portion 25a formed on an element separating region of a gate electrode 5 contains an impurity that changes a lattice constant. A stress in a direction of improving carrier mobility is applied to a channel region, where a starting point of stress application is determined to be the portion 25a of the gate electrode 5. COPYRIGHT: (C)2007,JPO&INPIT