METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method and a device for manufacturing a semiconductor device excellent in an embedding property and an electric characteristic with using an insulating film having a small dielectric constant. SOLUTION: The method for manufacturing the semiconductor device comprises the steps of generating a gas plasma 14 by introducing an oxygen gas and a chlorine gas 18 into a chamber 1 with vacuum exhausted, and by supplying an electric power to a plasma antenna 27; then generating a precursor 15 by etching a silicon member 20 to be etched with a chlorine gas radical; adsorbing the precursor 15 to a substrate 3 with an adjustment of a temperature control means 6; then reducing the precursor 15 adsorbed to the substrate with the chlorine gas radical, oxidizing with the oxygen gas radical to produce an SiO2film, and embedding the SiO2film in the groove having a large aspect ratio. COPYRIGHT: (C)2007,JPO&INPIT