发明名称 |
Superjunction device with improved ruggedness |
摘要 |
An improved superjunction semiconductor device includes a charged balanced pylon in a body region, where a top of the pylon is large to create slight charge imbalance. A MOSgated structure is formed over the top of the pylon and designed to conduct current through the pylon. By increasing a dimension of the top of the pylon, the resulting device is less susceptible to variations in manufacturing tolerances to obtain a good breakdown voltage and improved device ruggedness.
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申请公布号 |
US2007048909(A1) |
申请公布日期 |
2007.03.01 |
申请号 |
US20060586901 |
申请日期 |
2006.10.26 |
申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
SRIDEVAN SRIKANT |
分类号 |
H01L21/8232;H01L29/06;H01L21/306;H01L21/332;H01L21/335;H01L21/336;H01L29/10;H01L29/78 |
主分类号 |
H01L21/8232 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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