| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide the computation method of the proximity effect which can reduce the time and labor required for detecting dangerous points in a pattern to be transferred onto a thin-film layer in EB (electron beam) exposure. <P>SOLUTION: The computation method of the proximity effect includes a step (S11) wherein a photolithographic layer pattern to be transferred onto the thin-film layer and an underlying layer pattern to be transferred onto an underlying layer of the thin-film layer in EB exposure are each divided into a plurality of unit areas; a step (S12) of setting representative figures corresponding to the photolithographic layer pattern and the underlaying layer pattern, respectively, for each unit area; and a step (S13) of calculating the influence by the proximity effect in an arbitrary area of the photolithographic layer pattern based on the representative figures. <P>COPYRIGHT: (C)2007,JPO&INPIT |
