| 摘要 |
PROBLEM TO BE SOLVED: To provide an inspection and measuring device and an inspection and measuring method capable of measuring electrostatic charge potential of a test piece with high precision compared with a conventional technology and capable of measuring the charge potential with a simple structure. SOLUTION: With respect to a pattern inspection and measurement technology of such as a semiconductor device and a photomask using electron beam, fluctuations in charge potential on the surface of an inspecting test piece can be suppressed by optimizing the energy of a primary electron beam to be irradiated, when a S-shape curve is observed for the semiconductor device to become each inspection and measuring object. When the surface potential of the semiconductor device is measured by this device, more precise potential measurement than a conventional one becomes possible without almost affecting the original charge potential of an insulating film surface. Since the measurement of surface potential is possible without mounting a dedicated device for wafer surface potential measurement such as an energy filter, cost reduction of the device is also obtained. COPYRIGHT: (C)2007,JPO&INPIT
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