| 摘要 |
A semiconductor memory device including a trimmed voltage generator and a method of generating a trimmed voltage in the semiconductor memory device, in which the semiconductor memory device includes a voltage trimming unit, memory cell array, and a trimming current generator. The voltage trimming unit outputs a first trimming current control signal corresponding to a difference between a predetermined internal voltage and an external voltage supplied from outside of the semiconductor memory device in a trimming mode. The memory cell array stores the first trimming current control signal in the trimming mode and outputs a second trimming current control signal corresponding to the first trimming current control signal in a normal mode. The trimming current generator outputs a trimming current corresponding to the first trimming current control signal in the trimming mode and outputs a trimming current corresponding to the second trimming current control signal in the normal mode. The voltage trimming unit controls the internal voltage to be identical to the external voltage and outputs the controlled internal voltage as the trimmed voltage in response to the trimming current. The semiconductor memory device and the trimmed voltage generating method can output an accurate trimmed voltage without using a voltage supplied from outside in the normal operation.
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