NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND ITS WRITE METHOD

摘要

A nonvolatile semiconductor storage device includes: a common electrode (38); a resistance storage layer (42) formed on the common electrode (38) in such a way that it is switched between a high resistance state and a low resistance state by application of voltage; and a resistance storage element (46) having a plurality of separate electrodes formed on the resistance storage layer (42). A plurality of memory regions for independently storing the high resistance state and the low resistance state are formed in the resistance storage layer between the common electrode (38) and the separate electrodes (44). Thus, it is possible to obtain a minute resistance storage element and improve the integration degree of the nonvolatile semiconductor storage device.