| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device with built-in ferroelectrics which can achieve high-speed operation and low power consumption with a small footprint. <P>SOLUTION: The semiconductor memory device incorporates many memory cells MC allocated in a matrix pattern, many bit lines BL and plate line potential supply lines SCP each of which is lined up in a row direction, many word lines WL and plate lines CP each of which is lined up in a column direction, many sense amplifier circuits SA which are electrically connected with many bit lines respectively and are lined up in a column direction, many plate line potential supply circuits CPD lined up in a column direction for driving the corresponding plate line potential supply lines SCP, and a means for electrical connection of the plate potential supply line SCP with many plate lines CP. Each of many plate potential supply lines SCP is electrically connected with the corresponding plate line CP at different locations on the same plate line CP. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
