Integrated memory circuit for storing information has a memory cell to link to a read-write unit, a reference potential and a resistive connection

摘要

A memory cell (10) has a memory element (11) with a first connection for connecting to a read/write unit and a second connection for connecting to a reference potential. A source of potential makes a reference potential available for the second connection. A resistive connection element has a programmable resistor so as to connect the reference potential to the second connection. Independent claims are also included for the following: (1) A method for initializing an integrated memory circuit; (2) A method for producing an integrated memory circuit with a memory cell.