| 摘要 |
Disclosed is a method for arranging a semiconductor wafer in a disk-type ion implantation apparatus and/or process. In the present method, the wafer is arranged to satisfy conditions of A=T and R=W, where T represents an angle between the ion beam and a normal axis to the plane of the wafer, W represents an angle between a projection of the ion beam to the wafer and a notch of the wafer, A represents a vertical tilt angle of the wafer to the ion beam, B represents a horizontal tilt angle of the wafer to the ion beam, and R represents an anticlockwise rotation angle based on the notch.
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