| 发明名称 |
Nitride semiconductor light emitting device |
| 摘要 |
The invention relates to a high-output, high-efficiency nitride semiconductor light emitting device with low operating voltage and high resistance to electrostatic discharge. The nitride semiconductor light emitting device includes an n-contact layer formed on a substrate and a current spreading layer formed on the n-contact layer. The nitride semiconductor light emitting device also includes an active layer formed on the current spreading layer and a p-clad layer formed on the active layer. The current spreading layer comprises at least three multiple layers composed of at least one first nitride semiconductor layer made of In<SUB>x</SUB>Ga<SUB>(1-x)</SUB>N, where 0<x<1 and at least one second nitride semiconductor layer made of In<SUB>y</SUB>Ga<SUB>(1-y)</SUB>N, where 0<=y<1 and y<x, the first and second nitride semiconductor layers formed alternately. The multiple nitride semiconductor layers comprise some layers doped with n-type dopant and other layers which are undoped.
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| 申请公布号 |
US2007045655(A1) |
申请公布日期 |
2007.03.01 |
| 申请号 |
US20060508145 |
申请日期 |
2006.08.23 |
| 申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
SONG KEUN M.;LEE DONG Y.;KIM SUN W.;KIM JE W. |
| 分类号 |
H01L29/00;H01L33/06;H01L33/12;H01L33/14;H01L33/32 |
主分类号 |
H01L29/00 |
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