发明名称 |
Buried photodiode for image sensor with shallow trench isolation technology |
摘要 |
A buried photodiode with shallow trench isolation technology is formed in a semiconductor substrate of a first conductive type. A trench having a bottom portion and a sidewall portion is formed in the semiconductor substrate. An isolation region is formed on the bottom portion of the trench. A gate structure covers the sidewall portion of the trench. A first doped region of a second conductive type is formed in the semiconductor substrate adjacent to the trench and the gate structure. A second doped region of the first conductive type is formed overlying the first doped region near the surface of the semiconductor substrate.
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申请公布号 |
US2007045794(A1) |
申请公布日期 |
2007.03.01 |
申请号 |
US20050215288 |
申请日期 |
2005.08.30 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
YAUNG DUN-NIAN |
分类号 |
H01L23/02 |
主分类号 |
H01L23/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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