III-NITRIDE LIGHT-EMITTING DEVICE WITH DOUBLE HETEROSTRUCTURE LIGHT-EMITTING REGION
摘要
<p>A Ill-nitride light emitting layer is disposed between an n-type region and a p- type region. The light emitting layer is a doped thick layer. In some embodiments, the light emitting layer is sandwiched between two doped spacer layers.</p>
