| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem in a conventional semiconductor memory device that wrong decision happens by permitting voltage of a memory cell and voltage of a reference cell to be reversed. <P>SOLUTION: A manufacturing method of a semiconductor memory device comprises a process of forming dummy cells 61<SB>1</SB>to 61<SB>8</SB>so as to be situated next to a reference cell 41<SB>2</SB>, and a process of injecting an impurity into the dummy cells 61<SB>1</SB>to 61<SB>8</SB>using a mask for covering the reference cell 41<SB>2</SB>. In the process of injecting any impurity, the impurity is injected into the dummy cells 61<SB>1</SB>to 61<SB>8</SB>such that the impurity oozes from the dummy cells 61<SB>1</SB>to 61<SB>8</SB>to the reference cell 41<SB>2</SB>. <P>COPYRIGHT: (C)2007,JPO&INPIT |
