| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a protective film even on a thin magnetic metal film formed on a magnetic tape, which causes a large ohmic loss, with a plasma CVD technique at a higher film-forming rate without causing a failure in a product. <P>SOLUTION: The film-forming apparatus 10 for forming the protective film 1b on the magnetic film 1a which has been formed on a tape-shaped substrate 1 through a plasma reaction comprises: a reaction chamber 11 which forms a space for the plasma reaction for forming the protective film 1b on the magnetic film 1a; a reactant gas introduction part 12 for supplying a reactant gas for forming the protective film 1b into the reaction chamber 11; an anode 31 which is arranged in the reaction chamber 11 and generates plasma in between the magnetic film 1a and itself; electron-supplying sources 34 and 35 which are arranged outside the reaction chamber 11 and supplies an electron flow to the magnetic film 1a without contacting to the magnetic film 1a; and a control section 36 for controlling a current amount of the electron flow supplied to the magnetic film 1a from the electron donation sources 34 and 35. The control section 36 controls the current amount of the electron flow supplied to the magnetic film 1a from the electron donation sources 34 and 35 so as to be equal to or larger than that supplied to the anode 31. <P>COPYRIGHT: (C)2007,JPO&INPIT |
