| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of ferro-semiconductor device which is well controlled in the crystal orientation of each layer forming a ferroelectric material capacitor. SOLUTION: The manufacturing method of semiconductor device comprises the steps of (a) forming a titanium layer 112a at the upper part of a substrate 10, (b) forming a barrier layer 14a at the upper part of the titanium layer 112a, (c) converting the titanium layer 112a to a titanium nitride layer 12a by conducting heat treatment under the atmosphere including nitrogen, (d) forming a first electrode 32a at the upper part of the barrier layer 14a, (e) forming a ferroelectric material layer 34a at the upper part of the first electrode 32a, and (f) forming a second electrode 36a at the upper part of the ferroelectric material layer 34a. COPYRIGHT: (C)2007,JPO&INPIT
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