| 摘要 |
PROBLEM TO BE SOLVED: To provide a means for determining whether a wafer surface subjected to surface treatment is stabilized when minority carrier diffusion length in a silicon wafer is measured by an SPV method. SOLUTION: This method is used for determining the stabilization of the silicon wafer surface subjected to surface treatment. In this method, the diffusion length of minority carriers is measured for the silicon wafer subjected to surface treatment in at least two kinds of time constants by a surface optical voltage method, and it is determined whether the silicon wafer surface has been stabilized according to whether at least any one of ratios of the measured diffusion lengths has reached a target value. COPYRIGHT: (C)2007,JPO&INPIT
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