| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for casting a silicon polycrystal, which is a method for preventing increase of impurity concentration in a melt when melting and casting are continuously performed by a cooling crucible induction melting/casting method and by which a part wherein the impurity concentration is high can be eliminated without largely disturbing a continuous melting and casting work. SOLUTION: The method for casting the silicon polycrystal comprises inserting a partition means in the top part of a melt in which the impurities are concentrated, and then after charging a new raw material to be melted on the upper side of the partition means, continuing melting and casting. Thereby, the mixing of the melts existing at the lower side and at the upper side of the partition means is prevented, and the casting can be performed while avoiding the adverse effect of highly concentrated impurities. In this case, a partition plate or a partition plate having legs can be used as the partition means. COPYRIGHT: (C)2007,JPO&INPIT |
